AM29F016B-150E4C 查看數據表（PDF） - Advanced Micro Devices

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AM29F016B-150E4C

16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

Advanced Micro Devices 

PRELIMINARY

TEST CONDITIONS

5.0 V

Device

Under

Test

CL

6.2 kΩ

2.7 kΩ

Note: Diodes are IN3064 or equivalent

Figure 8. Test Setup

21444B-15

Table 7. Test Specifications

Test Condition

All speed

options

Unit

Output Load

1 TTL gate

Output Load Capacitance, CL

(including jig capacitance)

100

pF

Input Rise and Fall Times

20

ns

Input Pulse Levels

0.45–2.4

V

Input timing measurement

reference levels

0.8

V

Output timing measurement

reference levels

2.0

V

KEY TO SWITCHING WAVEFORMS

WAVEFORM

INPUTS

Steady

OUTPUTS

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted

Changing, State Unknown

Does Not Apply

Center Line is High Impedance State (High Z)

KS000010-PAL

24

Am29F016B

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