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MMDF3N04HDR2G Datasheet PDF : 8 Pages
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MMDF3N04HD
Power MOSFET
3 Amps, 40 Volts
N−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. These devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc−dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Features
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
• Avalanche Energy Specified
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C (Note 1)
− Continuous @ TA = 70°C (Note 1)
− Pulsed Drain Current (Note 3)
Total Power Dissipation @ TA = 25°C (Note 1)
Linear Derating Factor (1)
VDSS
VDGR
VGS
ID
ID
IDM
PD
40
Vdc
40
Vdc
± 20
Vdc
3.4
Adc
3.0
40
Apk
2.0
W
16
mW/°C
Total Power Dissipation @ TA = 25°C (Note 2) PD
Linear Derating Factor (2)
1.39
11.11
W
mW/°C
Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C
Single Pulse Drain−to−Source Avalanche
EAS
162
mJ
Energy − Starting TJ = 25°C (VDD = 25 Vdc,
VGS = 10 Vdc, Peak IL = 9.0 Apk,
L = 4.0 mH, VDS = 40 Vdc)
THERMAL CHARACTERISTICS
Rating
Symbol Typ Max Unit
Thermal Resistance, (PCB Mount)
− Junction−to−Ambient, (Note 1)
− Junction−to−Ambient, (Note 2)
RqJA
RqJA
°C/W
− 62.5
− 90
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When mounted on 1″ square FR−4 or G−10 board (VGS = 10 V, @ 10 Secs)
2. When mounted on minimum recommended FR−4 or G−10 board (VGS = 10 V,
@ Steady State)
3. Repetitive rating; pulse width limited by maximum junction temperature.
http://onsemi.com
V(BR)DSS
40 V
RDS(on) TYP
80 mW @ TBD
ID MAX
3.0 A
N−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 11
MARKING
DIAGRAM
8
D3N04H
AYWWG
G
1
D3N04H = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
1 8 Drain−1
2 7 Drain−1
3 6 Drain−2
4 5 Drain−2
ORDERING INFORMATION
Device
Package
Shipping†
MMDF3N04HDR2G SO−8 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 5
Publication Order Number:
MMDF3N04HD/D
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