MMG3003NT1 查看數據表（PDF） - Freescale Semiconductor

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MMG3003NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor 

Table 4. Electrical Characteristics (VCC = 6.2 Vdc, 900 MHz, TA = 25°C, 50 ohm system, in Freescale Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Small--Signal Gain (S21)

Input Return Loss (S11)

Gp

19.3

20

—

IRL

—

--15

—

Output Return Loss (S22)

ORL

—

--9.3

—

Power Output @ 1dB Compression

P1dB

—

24

—

Third Order Output Intercept Point

OIP3

—

40.5

—

Noise Figure

NF

—

4

—

Supply Current (1)

ICC

160

180

205

Supply Voltage (1)

VCC

—

6.2

—

1. For reliable operation, the junction temperature should not exceed 150°C.

Unit

dB

dB

dB

dBm

dBm

dB

mA

V

MMG3003NT1

2

RF Device Data

Freescale Semiconductor, Inc.

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