MMSF10N02ZR2 查看數據表（PDF） - Motorola => Freescale

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MMSF10N02ZR2

IMOS Single N-Channel with Monolithic Zener ESD Protected Gate

Motorola => Freescale 

MMSF10N02Z

di/dt = 300 A/µs

Standard Cell Density

trr

High Cell Density

trr

ta

tb

t, TIME

Figure 11. Reverse Recovery Time (trr)

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves de-

fine the maximum simultaneous drain–to–source voltage

and drain current that a transistor can handle safely when

it is forward biased. Curves are based upon maximum

peak junction temperature and a case temperature (TC)

of 25°C. Peak repetitive pulsed power limits are deter-

mined by using the thermal response data in conjunction

with the procedures discussed in AN569, “Transient

Thermal Resistance – General Data and Its Use.”

Switching between the off–state and the on–state may

traverse any load line provided neither rated peak current

(IDM) nor rated voltage (VDSS) is exceeded, and that the

transition time (tr, tf) does not exceed 10 µs. In addition

the total power averaged over a complete switching cycle

must not exceed (TJ(MAX) – TC)/(RθJC).

A power MOSFET designated E–FET can be safely

used in switching circuits with unclamped inductive

loads. For reliable operation, the stored energy from cir-

cuit inductance dissipated in the transistor while in ava-

lanche must be less than the rated limit and must be

adjusted for operating conditions differing from those

specified. Although industry practice is to rate in terms of

energy, avalanche energy capability is not a constant.

The energy rating decreases non–linearly with an in-

crease of peak current in avalanche and peak junction

temperature.

100

VGS = 11 V

SINGLE PULSE

1 ms

TC = 25°C

10 ms

10

dc

1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.1

0.1

1

10

100

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

6

Motorola TMOS Power MOSFET Transistor Device Data

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