MRF9060MR1 查看數據表（PDF） - Motorola => Freescale

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MRF9060MR1

RF Power Field Effect Transistors

Motorola => Freescale 

ESD PROTECTION CHARACTERISTICS

Test Conditions

Human Body Model

Machine Model

Charge Device Model

MOISTURE SENSITIVITY LEVEL

Test Methodology

Per JESD 22–A113

MRF9060MR1

MRF9060MBR1

MRF9060MR1

MRF9060MBR1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

IDSS

—

IGSS

—

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 200 µAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 450 mAdc)

VGS(th)

2

VGS(Q)

3

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 1.3 Adc)

VDS(on)

—

Forward Transconductance

(VDS = 10 Vdc, ID = 4 Adc)

gfs

—

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Ciss

—

Output Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

Crss

—

Class

1 (Minimum)

M2 (Minimum)

C6 (Minimum)

C5 (Minimum)

Rating

1

3

Typ

Max

—

10

—

1

—

1

Unit

µAdc

µAdc

µAdc

2.8

4

Vdc

3.7

5

Vdc

0.21

0.4

Vdc

5.3

—

S

101

—

pF

53

—

pF

2.5

—

pF

(continued)

MRF9060MR1 MRF9060MBR1

2

MOTOROLA RF DEVICE DATA

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