MRF9100SR3 查看數據表（PDF） - Motorola => Freescale

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MRF9100SR3

RF Power Field Effect Transistors

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Current

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

—

10

IDSS

—

—

1

IGSS

—

—

1

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 500 µAdc)

VGS(th)

2

—

4

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 800 mAdc)

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 2 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

VGS(Q)

3

—

5

VDS(on)

—

0.19

0.5

gfs

—

8

—

DYNAMIC CHARACTERISTICS (1)

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

1.0

—

FUNCTIONAL TESTS (In Motorola Test Fixture)

Output Power, 1 dB Compression Point, CW

(VDD = 26 Vdc, IDQ = 800 mA, f = 960 MHz)

P1dB

100

110

—

Common–Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,

f = 960 MHz)

Gps

16

17

—

Drain Efficiency

(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,

f = 960 MHz)

η

47

51

—

Input Return Loss

(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,

f1 = 921 MHz and 960 MHz,

f2 = 940 MHz)

IRL

—

—

—

–10

–20

—

Third Order Intermodulation Distortion

IMD

—

–30

—

(VDD = 26 Vdc, Pout = 100 W PEP, IDQ = 800 mA,

f = Full GSM Band 921–960 MHz, Tone Spacing = 100 kHz)

Output Mismatch Stress

Ψ

(VDD = 26 Vdc, IDQ = 800 mA, Pout = 100 W CW,

f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of

Tests)

No Degradation In Output Power

Before and After Test

(1) Part is internally matched both on input and output.

Unit

µAdc

µAdc

µAdc

Vdc

Vdc

Vdc

S

pF

W

dB

%

dB

dBc

MRF9100 MRF9100R3 MRF9100SR3

2

MOTOROLA RF DEVICE DATA

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