MTSF3N03HD 查看數據表（PDF） - Motorola => Freescale

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MTSF3N03HD

TMOS Single N-Channel Field Effect Transistor

Motorola => Freescale 

MTSF3N03HD

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

Gate–to–Source Voltage — Continuous

1 inch SQ.

FR–4 or G–10 PCB

Figure 1 below

Steady State

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (1)

Minimum

FR–4 or G–10 PCB

Figure 2 below

Steady State

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (1)

Operating and Storage Temperature Range

W Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25 )

(1) Repetitive rating; pulse width limited by maximum junction temperature.

Symbol

VDSS

VDGR

VGS

RTHJA

PD

ID

ID

IDM

RTHJA

PD

ID

ID

IDM

TJ, Tstg

EAS

Max

30

30

± 20

70

1.79

14.29

5.7

4.5

45

160

0.78

6.25

3.8

3.0

30

– 55 to 150

200

Unit

V

V

V

°C/W

Watts

mW/°C

A

A

A

°C/W

Watts

mW/°C

A

A

A

°C

mJ

Figure 1. 1.0 Inch Square FR–4 or G–10 PCB

Figure 2. Minimum FR–4 or G–10 PCB

2

Motorola TMOS Power MOSFET Transistor Device Data

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