MW7IC18100GNR1 查看數據表（PDF） - Freescale Semiconductor

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MW7IC18100GNR1

1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

Freescale Semiconductor 

TYPICAL CHARACTERISTICS — 1800 MHz

32

55

PAE

31

50

30

Gps

29

28

IRL

27

VDD1 = 28 Vdc, Pout = 100 W CW

IDQ1 = 180 mA, IDQ2 = 1000 mA

45

40

−10

35

−15

30

−20

26

25

−25

1760 1780 1800 1820 1840 1860 1880 1900 1920 1940

f, FREQUENCY (MHz)

Figure 29. Power Gain, Input Return Loss and Power Added

Efficiency versus Frequency @ Pout = 100 Watts CW

32

60

31

Gps

30

29 PAE

28

VDD1 = 28 Vdc, Pout = 40 W Avg.

IDQ1 = 215 mA, IDQ2 = 800 mA

EDGE Modulation

50

40

−10

30

−15

20

27

−20

IRL

26

10

−25

EVM

25

0

−30

1760 1780 1800 1820 1840 1860 1880 1900 1920 1940

f, FREQUENCY (MHz)

Figure 30. Power Gain, Input Return Loss, EVM and Power

Added Efficiency versus Frequency @ Pout = 40 Watts Avg.

33

32

1000 mA

31

750 mA

30

500 mA

29

IDQ2 = 1500 mA

1250 mA

28

VDD = 28 Vdc, IDQ1 = 180 mA

f = 1840 MHz

27

1

10

100 200

Pout, OUTPUT POWER (WATTS) CW

Figure 31. Two - Tone Power Gain versus

Output Power @ IDQ1 =180 mA

36

35

IDQ1 = 270 mA

34 225 mA

33

VDD = 28 Vdc, IDQ2 = 1000 mA

f = 1840 MHz

32 180 mA

31

135 mA

30

29

28

90 mA

27

26

1

10

100 200

Pout, OUTPUT POWER (WATTS) CW

Figure 32. Two - Tone Power Gain versus

Output Power @ IDQ2 = 1000 mA

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

16

RF Device Data

Freescale Semiconductor

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