NX25F011B 查看數據表（PDF） - Unspecified

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产品描述 (功能)

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NX25F011B

1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE

Unspecified 

NX25F011B

NX25F021B

NX25F041B

Read Device Information Sector (15H)

The Read Device Information command provides access

to a read-only sector that can be used to electronically

identify the NexFlash Serial Flash device being inter-

faced to. Information available includes: part number,

density, voltage, temperature range, package type, and

any special options. This can be extremely useful for

systems that need to accommodate optional densities

(e.g., both 1M-bit or 2M-bit). In this case the firmware can

interrogate the Device Information Sector and

determine the density. The Device Information Sector

also includes a list of any restricted sectors that might

exist in the device. Contact NexFlash for more detailed

information on the Device Information Sector format.

Read Device

Info. Sector

Command 16 Clocks

SI

15H

0000H

Byte

Address*

B[15:0]

16 Clocks

0000H

SO

*The byte address only uses bits [8:0]

RB[15:0]

Read/Busy

Status

First Byte - Last Byte

Read Sector Data

SPECIAL SECTOR COMMANDS

Erase Sector (F1H)

The Erase Sector command (F1H) will erase a sector to an

“all 1s” state, during this time the array will be "busy." This

command can be used in conjunction with the Write only to

Sector through SRAM command (F2H) to achieve faster

program performance in applications that can accommo-

date pre-erase. (see TEO in AC Characteristics for

erase timing).

Erase

Sector

Command

SI

F1H

Sector

Address*

S[15:0]

16

Clocks

0000H

Transfer Time

(tEO)

SO

*The sector address only uses bits [8:0], [9:0] or [10:0]

Depending on device density

24

NexFlash Technologies, Inc.

PRELIMINARY NXSF016F-1201

12/12/01 ©

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