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PDM1405HA 查看數據表(PDF) - Nihon Inter Electronics

零件编号
产品描述 (功能)
生产厂家
PDM1405HA
NIEC
Nihon Inter Electronics NIEC
PDM1405HA Datasheet PDF : 3 Pages
1 2 3
MOSFET MODULE Dual 140A /500V
PDM1405HA
FEATURES
* Dual MOS FETs Cascaded Circuit
* Prevented Body Diodes of MOSFETs by
SBDs, and Ultra Fast Recovery Diodes
Connected in Parallel
* 300KHz High Speed Switching Possible
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
OUTLINE DRAWING
Circuit
Dimension(mm)
MAXMUM RATINGS
Ratings
Symbol
PDM1405HA
Drain-Source Voltage (VGS=0V)
VDSS
Gate - Source Voltage
VGSS
Continuous Drain Current
Duty=50%
D.C.
ID
Pulsed Drain Current
IDM
Total Power Dissipation
PD
Operating Junction Temperature Range
Tjw
Storage Temperature Range
Tstg
Isolation Voltage Terminals to Base AC, 1 min.)
VISO
Mounting Torque
Module Base to Heatsink
Bus Bar to Main Terminals
FTOR
500
+/ - 20
140 (Tc=25°C)
100 (Tc=25°C)
280 Tc=25°C)
880 Tc=25°C)
-40 to +150
-40 to +125
2000
3.0
2.0
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Zero Gate Voltage Drain Current
Gate-Source Threshold Voltage
Gate-Source Leakage Current
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IDSS
VDS=VDSS,VGS=0V
Tj=125°C, VDS=0.8VDSS,VGS=0V
-
-
VGS(th) VDS=VGS, ID=3mA
2.0
IGSS VGS=+/- 20V,VDS=0V
-
rDS(on) VGS=10V, ID=70A
-
VDS(on) VGS=10V, ID=70A
-
gfs VDS=15V, ID=70A
-
Cies
-
Coss VDS=25V,VGS=0V,f=1MHz
-
Crss
-
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on) VDD= 1/2VDSS
-
tr
ID=70A
-
td(off) VGS= -5V, +10V
-
tf
RG= 5 ohm
-
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min.
Continuous Source Current
IS
D.C.
-
Pulsed Source Current
ISM
-
-
Diode Forward Voltage
VSD IS=140A
-
Reverse Recovery Time
Reverse Recovery
trr
Qr
IS=140A, -dis/dt=100A/µs
-
-
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Min.
Thermal Resistance, Junction to Case
Rth(j-c)
MOS FET
Diode
-
-
Thermal Resistance, Case to Heatsink
Rth(c-f)
Mounting surface flat, smooth, and greased
-
Approximate Weight : 460g
Unit
V
V
A
A
W
°C
°C
V
Nm
Typ. Max. Unit
-
-
2.0
8.0
mA
3.1
4.0
V
-
1.0
µA
35
40 m-ohm
3.0
3.4
V
100
-
S
28
-
nF
3.6
-
nF
0.8
-
nF
300
-
420
810
-
-
ns
200
-
Typ. Max. Unit
-
100
A
-
280
A
-
1.7
V
130
-
ns
0.3
-
µC
Typ. Max. Unit
-
0.142
-
1.0 °C/W
-
0.05

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