Schottky Barrier Diode
RB225NS-40
lApplications
General rectification
lDimensions (Unit : mm)
lFeatures
1)Cathode common dual type.(LPDS)
2)Low IR
RB225
NS40
①
Data Sheet
lLand size figure (Unit : mm)
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
lTaping dimensions (Unit : mm)
lStructure
①②③
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
VRM
40
Reverse voltage (DC)
VR
40
Average rectified forward current (*1)
Io
30
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg
-40 to +150
(*1) 60Hz half sin wave, vesistive load at Tc=70°C. 1/2 Io per diode
lElectrical characteristics (Tj=25C)
Parameter
Symbol Min.
Forward voltage
Reverse current
VF
-
IR
-
Thermal resistance
Rth (J-C) -
Typ.
0.53
0.08
-
Max.
0.63
0.5
2.00
Unit
V
V
A
A
C
C
Unit
V
mA
°C/W
Conditions
IF=15A
VR=40V
junction to case
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A