RTO50 查看數據表（PDF） - Vishay Semiconductors
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RTO50 Datasheet PDF : 4 Pages
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RTO 50
Vishay Sfernice
Power Resistor Thick Film Technology
PERFORMANCE
TESTS
Momentary Overload
Us < 1.5UL
Rapid Temperature Change
5 cycles - 55°C to + 155°C
Load Life
Humidity (Steady State)
Method 103 B Cond. D
Vibration
Method 204 Cond. D
Terminal Strength
Method 211 Cond. A1
CONDITIONS
NF EN 140000
2Pr/5s
NF EN 140000
CEI 68214 Tests Na
NF EN 140000 Pr at + 25°C CEI 115_1
MIL STD 202
MIL STD 202
MIL STD 202
TYPICAL DRIFTS
± (0.25% + 0.05Ω)
± (0.5% + 0.05Ω)
± (1% + 0.05Ω)
± (0.5% + 0.05Ω)
± (0.2% + 0.05Ω)
± (0.2% + 0.05Ω)
SPECIAL FEATURES
Resistance Values
Tolerances
Temperature
Coefficient
Standard
≥ 0.010Ω
± 900ppm/°C
≥ 0.015Ω
± 700ppm/°C
≥ 0.1Ω
± 1% at ± 10%
± 250ppm/°C
≥ 0.5Ω
± 150ppm/°C
CHOICE OF THE HEATSINK
The user must choose according to the working conditions of the component (power, room temperature).
Maximum working temperature must not exceed 155°C. The dissipated power is simply calculated by the following ratio:
∆T
(1)
P=
[RTH (j-c) + RTH (c-a)]
P: expressed in W
T: difference between maximum working temperature and room temperature.
RTH: (j-c): thermal resistance value measured between resistive layer and outer side of the resistor. It is the thermal
resistance of the component: (Special Features Table)
RTH: (c-a): thermal resistance value measured between outer side of the resistor and room temperature. It is the
thermal resistance of the heatsink itself (type, shape) and the quality of the fastening device.
Example:
RTH: (c-a) for RTO 50 power rating 13 W at ambient temperature + 30°C.
Thermal resistance RTH (j-c): 25°C/W
Considering equation (1) we have:
∆T ≤ 155°C - 30°C ≤ 125°C
RTH (j-c) + RTH (c-a) =
∆T
P
=
125
13
=
9.6°C/W
RTH (c-a) ≤ 9.6°C/W - 2.6°C/W ≤ 7°C/W
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For technical questions, contact sfer@vishay.com
Document Number: 50035
Revision 14-Jan-05
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