S-80717AL-AE-X 查看數據表（PDF） - Seiko Instruments Inc
零件编号
产品描述 (功能)
生产厂家
S-80717AL-AE-X Datasheet PDF : 42 Pages
| |||
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
19. S-80731AL/AL-AV-X, S-80731AN/AN-DV-X (Detection voltage : 3.025 to 3.175 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
Min.
3.025
-VDET
×0.02
1.0
0.23
1.60
0.36
Typ.
3.100
-VDET
×0.05
1.0
0.50
(Unless otherwise specified : Ta=25°C)
Max.
Unit Test
circuit
3.175
V
1
-VDET
V
1
×0.08
3.0
µA
2
15.0
V
1
mA
3
3.70
0.62
4
±0.39
mV/°C
20. S-80731AH/AH-BV-X (Detection voltage : 3.025 to 3.175 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Pch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Nch
VDS = 0.5 V
VDD = 4.8 V
Ta=-30°C to 80°C
Min.
3.025
-VDET
×0.02
1.0
0.03
0.15
4.06
Typ.
3.100
-VDET
×0.05
1.0
0.09
(Unless otherwise specified : Ta=25°C)
Max.
Unit Test
circuit
3.175
V
1
-VDET
V
1
×0.08
3.0
µA
2
15.0
V
1
mA
4
0.30
8.36
3
±0.39
mV/°C
21. S-80732AL/AL-AW-X, S-80732AN/AN-DW-X, S-80732SL-AW-X (Detection voltage : 3.123 to 3.277 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
3.123 3.200 3.277
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.0
3.0
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
1.60 3.70
0.36 0.62
4
±0.40
mV/°C
Seiko Instruments Inc.
13
Share Link: 