4 Mbit SuperFlash EEPROM
SST28SF040A / SST28VF040A
Data Sheet
TABLE 8: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1
TPU-WRITE1
Power-up to Read Operation
Power-up to Write Operation
10
ms
10
ms
T8.4 310
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
6 pF
T9.0 310
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Minimum Specification
Units Test Method
NEND1
TDR1
Endurance
Data Retention
10,000
100
Cycles JEDEC Standard A117
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T10.7 310
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
9
S71077-04-000 6/01 310