ST3DV520QTR 查看數據表（PDF） - STMicroelectronics

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ST3DV520QTR

High bandwidth analog switch with 16-to-8 bit MUX/DEMUX

STMicroelectronics 

ST3DV520

Maximum ratings

Table 5.

Symbol

DC electrical characteristics (TA = -40 to 85 °C, VCC = 3.3 V ± 10%)

Parameter

Test conditions

Min Typ Max Unit

VIH Voltage input high

High level guaranteed

2

V

VIL Voltage input low

Low level guaranteed

-0.5

0.8 V

VIK Clamp diode voltage

VCC = 3.6 V, IIN = -18 mA

-0.8 -1.2 V

IIH Input high current

VCC = 3.6 V, VIN = VCC

± 5 μA

IIL Input low current

VCC = 3.6 V, VIN = GND

± 5 μA

VCC = 0 V, A to H

IOFF Power down leakage current V = 0 V,

± 5 μA

A0 to H0 and A1 to H1 ≤ 3.6 V

t(s) RON Switch ON resistance(1)

VCC = 3.0 V, VIN = 1.5 to VCC

IIN = -40mA

5.5 7.5 Ω

roduc RFLAT ON resistance flatness(1)(2)

VCC = 3.0 V, VIN at 1.5 and

VCC

IIN = -40mA

0.8

Ω

te P ΔRON

ON resistance match between

channel

ΔRON = RONMAX-RONMIN (1)(3)

VCC = 3.0 V, VIN = 1.5 to VCC

IIN = -40mA

0.5 1 Ω

le 1. Measured by voltage drop between channels at indicated current trough the switch. ON resistance is

o determined by the lower of the voltage.

bs 2. Flatness is defined as the difference between the RONMAX and RONMIN of ON resistance over the specified

range.

O 3. ΔRON measured at same VCC, temperature and voltage level.

t(s) - Table 6.

c Symbol

Capacitance specifications (TA = 25 °C, f = 1 MHz)

Parameter

Test conditions

Min Typ Max Unit

du CIN

ro COFF

te P CON

Input capacitance(1)

Port x0 to port x1, switch off

Capacitance switch on

(x to x0 or x to x1)

VIN = 0 V

VIN = 0 V

VIN = 0 V

2

3 pF

4

6 pF

7.5 11 pF

le1. x = A to H, x0 = A0 to H0, x1 = A1 to H1.

Obso Table 7. Power supply characteristics (TA = -40 to 85 °C)

Symbol

Parameter

Test conditions

Min Typ Max Unit

ICC Quiescent power supply

VCC = 3.6 V

VIN = VCC or GND

150 500 µA

Table 8.

Symbol

Dynamic electrical characteristics (TA = -40 to 85 °C, VCC = 3.3 V ± 10%)

Parameter

Test conditions

Min Typ Max Unit

Xtalk

OIRR

BW

Crosstalk

Off isolation

-3 dB bandwidth

RL= 100 Ω, f = 250 MHz

RL= 100 Ω, f = 250 MHz

RL= 100 Ω

-40

dB

-36

dB

450

MHz

Doc ID 15092 Rev 3

5/10

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