DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ST619LB(2007) 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
ST619LB
(Rev.:2007)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ST619LB Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ST619LB
5
Electrical characteristics
Electrical characteristics
Table 5.
Symbol
Electrical characteristics (VI = 2 to 3.6 V, C1 = C2 = 0.22 µF, C3 = C4 = 10 µF,
TA = -40 to 85°C, unless otherwise specified. Typical value are referred at TA = 25 °C)
Parameter
Test conditions
Min. Typ. Max. Unit
VI Input voltage
VO Output voltage
VRIPPLE Output voltage ripple
Ii No load supply current
ISHDN Shutdown supply current
ν Efficiency
fOSC
VIH
VIL
IIH
Switching frequency
SHDN input threshold
SHDN input threshold
SHDN input current
VI = 2 to 3.6V, IO =0 to 20mA
VI = 3 to 3.6V, IO=0 to 30mA
No load, Full load
VI = 2 to 3V, No load
VI = 3 to 3.6V, No load
VI = 2 to 3.6V, No Load, VSHDN = VI
VI = 3V, IO =20mA
VI = 3V, IO =30mA
VI = 2V, IO =20mA
Full load
VSHDN = VI
2
3.6
V
4.8
5
5.2
V
4.8
5
5.2
V
100
mV
200 300
µA
75 150
0.02 1
µA
82
82
%
80
500
kHz
0.7VI
V
0.4
V
0.005 ± 1
µA
Note:
Do not overload or short the output to ground. If the above conditions are not observed the
device may be damaged.
7/16

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]