ST700C..L Series
Bulletin I25190 rev. D 04/00
Switching
di/dt
Parameter
Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
ST700C..L
1000
1.0
150
Units Conditions
A/µs
µs
Gate drive 20V, 20Ω, tr ≤ 1µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Blocking
Parameter
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM Max. peak reverse and off-state
IRRM leakage current
ST700C..L
500
80
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
mA TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
P
Maximum peak gate power
GM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
I
DC gate current required
GT
to trigger
V
DC gate voltage required
GT
to trigger
IGD DC gate current not to trigger
VGD DC gate voltage not to trigger
ST700C..L
10.0
2.0
3.0
Units Conditions
T
J
=
T
J
max,
tp
≤
5ms
W TJ = TJ max, f = 50Hz, d% = 50
A TJ = TJ max, tp ≤ 5ms
20
V TJ = TJ max, tp ≤ 5ms
5.0
TYP.
200
MAX.
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
10
0.25
TJ = - 40°C
mA T = 25°C
J
TJ = 125°C
TJ = - 40°C
V TJ = 25°C
TJ = 125°C
mA
V
TJ = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V anode-to-cathode applied
DRM
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