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TC74ACT175F(2014) 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
TC74ACT175F
(Rev.:2014)
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Toshiba
TC74ACT175F Datasheet PDF : 8 Pages
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TC74ACT175P/F
Electrical Characteristics
DC Characteristics
Characteristics
High-level input
voltage
Low-level input
voltage
High-level output
voltage
Symbol
V
IH
V
IL
V
OH
Low-level output
voltage
V
OL
Input leakage
current
I
IN
I
CC
Quiescent supply
current
I
C
Test Condition
⎯
Ta
=
25°C
Ta
=
−
40 to 85°C
Unit
V
CC
(V) Min Typ. Max Min Max
4.5 to 5.5 2.0
⎯ ⎯
2.0
⎯
V
⎯
4.5 to 5.5
⎯
⎯
0.8
⎯
0.8
V
V
IN
I
OH
=
−
50
μ
A
4.5
=
V
IH
or I
OH
=
−
24 mA
4.5
V
IL
I
OH
=
−
75 mA (Note) 5.5
V
IN
I
OL
=
50
μ
A
4.5
=
V
IH
or I
OL
=
24 mA
4.5
V
IL
I
OL
=
75 mA (Note) 5.5
4.4 4.5
⎯
4.4
⎯
3.94
⎯ ⎯
3.80
⎯
V
⎯ ⎯ ⎯
3.85
⎯
⎯
0.0 0.1
⎯
0.1
⎯ ⎯
0.36
⎯
0.44 V
⎯
⎯
⎯
⎯
1.65
V
IN
=
V
CC
or GND
5.5
⎯ ⎯
±
0.1
⎯
±
1.0
μ
A
V
IN
=
V
CC
or GND
Per input: V
IN
=
3.4 V
Other input: V
CC
or GND
5.5
⎯ ⎯
8.0
⎯
80.0
μ
A
5.5
⎯ ⎯
1.35
⎯
1.5 mA
Note: This spec indicates the capability of driving 50
Ω
transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
Timing Requirements
(input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
Test Condition
Minimum pulse width
t
W (L)
⎯
(CK)
t
W (H)
Minimum pulse width
t
W (L)
⎯
(
CLR )
Minimum set-up time
t
s
⎯
Minimum hold time
t
h
⎯
Minimum removal time
t
rem
⎯
(
CLR
)
Ta
=
Ta
=
−
40 to
25°C
85°C Unit
V
CC
(V) Limit Limit
5.0
±
0.5 5.0
5.0
ns
5.0
±
0.5 5.0
5.0
ns
5.0
±
0.5 4.0
4.0
ns
5.0
±
0.5 1.0
1.0
ns
5.0
±
0.5 4.0
4.0
ns
4
2014-03-01
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