VNQ810M(2013) 查看數據表（PDF） - STMicroelectronics

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VNQ810M
(Rev.:2013)

Quad channel high side driver

STMicroelectronics 

VNQ810M

Electrical specifications

Table 13. Electrical transient requirements

ISO T/R

7637/1

Test pulse

I

Test level

II

III

IV

Delays and impedance

1

- 25V

- 50V

- 75V

- 100V

2ms, 10Ω

2

+ 25V

+ 50V

+ 75V

+ 100V

0.2ms, 10Ω

3a

- 25V

- 50V

- 100V

- 150V

0.1µs, 50Ω

3b

+ 25V

+ 50V

+ 75V

+ 100V

0.1µs, 50Ω

4

- 4V

- 5V

- 6V

- 7V

100ms, 0.01Ω

5

t(s) ISO T/R

c 7637/1

u Test pulse

rod 1

P 2

te 3a

le 3b

so 4

Ob 5

+ 26.5V

I

C

C

C

C

C

C

+ 46.5V

+ 66.5V

+ 86.5V

Test level

II

III

C

C

C

C

C

C

C

C

C

C

E

E

400ms, 2Ω

IV

C

C

C

C

C

E

t(s) - Class

c C

Obsolete Produ E

Contents

All functions of the device are performed as designed after exposure to

disturbance.

One or more functions of the device is not performed as designed after exposure

and cannot be returned to proper operation without replacing the device.

13/28

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