STU13NM60N(2020) 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STU13NM60N
(Rev.:2020)

N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages

STMicroelectronics 

STF13NM60N, STI13NM60N

STP13NM60N, STU13NM60N

Datasheet

N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs

in a TO-220FP, I²PAK, TO-220 and IPAK packages

TAB

Features

3

12

TO-220FP

TAB

1 23

I2PAK

TAB

TO-220

1 23

3

12

IPAK

Order codes

VDS

RDS(on) max.

STF13NM60N

STI13NM60N

STP13NM60N

600 V

360 mΩ

STU13NM60N

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

ID

11 A

D(2, TAB)

Applications

• Switching applications

G(1)

S(3)

NG1D2TS3

Description

These devices are N-channel Power MOSFETs developed using the second

generation of MDmesh technology. These revolutionary Power MOSFETs associate a

vertical structure to the company’s strip layout to yield one of the world’s lowest on-

resistance and gate charge. They are therefore suitable for the most demanding

high-efficiency converters.

Product status link

STF13NM60N

STI13NM60N

STP13NM60N

STU13NM60N

DS6112 - Rev 6 - October 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

Share Link: