2SB1197KPT 查看數據表（PDF） - CHENMKO CO., LTD.
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2SB1197KPT Datasheet PDF : 4 Pages
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RATING CHARACTERISTIC CURVES ( 2SB1197KPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCEsat
Cc
fT
PARAMETER
CONDITIONS
collector-base breakdown voltage IE = 0; IC =-50 uA
collector-emitter breakdown voltage IB = 0; IC =-1 mA
emitter-base breakdown voltage IC = 0; IE =-50 uA
collector cut-off current
IE = 0; VCB = - 20 V
emitter cut-off current
IC = 0; VEB = - 4 V
DC current gain
VCE = -3V; note 1
IC = -100 mA
collector-emitter saturation
voltage
IC = -500 mA, IB=-50 mA
collector capacitance
transition frequency
IE = ie = 0; VCB =-10 V ; f = 1 MHz
IC = 10 mA; VCE = - 2 0 V ;
f = 100 MHz
MIN.
-40
-32
-5
−
−
120
−
12Typ.
50
MAX.
−
−
−
-500
-500
390
-500
30
200Typ.
UNIT
V
V
V
nA
nA
mV
pF
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. hFE: Q Gade: 120~270
R Gade: 180~390
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