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零件编号
产品描述 (功能)
J610 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
J610
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
Toshiba
J610 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
5
Common source
V
GS
= −
10 V
Pulse test
4
−
2 A
3
ID
= −
1 A
2
1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – V
DS
1000
Ciss
Coss
100
Crss
10
Common source
V
GS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
−
0.1
−
0.3
−
1
−
3
−
10
−
30
Drain-source voltage V
DS
(V)
−
100
2SJ610
−
100
Common source
Tc
=
25°C
Pulse test
I
DR
– V
DS
−
10
−
1
VGS
= −
10 V
−
5 V
−
3 V
0, 1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Drain-source voltage V
DS
(V)
V
th
– Tc
−
5
Common source
V
DS
= −
10 V
I
D
= −
1 mA
Pulse test
−
4
−
3
−
2
−
1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
– Tc
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
−
300
−
30
Common source
I
D
= −
2 A
−
25
Tc
=
25°C
−
200
VDS
Pulse test
−
20
−
100
0
0
−
15
−
50
VGS
−
10
VDD
= −
200 V
−
100
−
5
−
0
5
15
25
35
Total gate charge Q
g
(nC)
4
2010-02-05
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