K9G4G08B0A 查看數據表（PDF） - Samsung

零件编号

产品描述 (功能)

生产厂家

K9G4G08B0A

FLASH MEMORY

Samsung 

K9L8G08U1A

K9G4G08U0A K9G4G08B0A

Preliminary

FLASH MEMORY

Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L)

CE

RE

I/Ox

R/B

tRC

tRP

tREH

tREA

tCEA

tRR

tREA

tRLOH(2)

Dout

tCHZ(1)

tCOH

tRHZ(1)

tRHOH(2)

Dout

NOTES : 1. Transition is measured at ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

2. tRLOH is valid when frequency is higher than 20MHz.

tRHOH starts to be valid when frequency is lower than 20MHz.

Status Read Cycle

CLE

CE

WE

RE

I/Ox

tCLS

tCS

tCLH

tCLR

tCH

tWP

tWHR

tCEA

tCHZ

tCOH

tDS tDH

70h/F1h

tIR

tREA

tRHZ

tRHOH

Status Output

21

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