MCF5208CVM166(2006) 查看數據表（PDF） - Freescale Semiconductor

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MCF5208CVM166
(Rev.:2006)

ColdFire® Microprocessor

Freescale Semiconductor 

Preliminary Electrical Characteristics

NOTES:

1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for

Automotive Grade Integrated Circuits.

2 A device is defined as a failure if after exposure to ESD pulses the device no longer meets

the device specification requirements. Complete DC parametric and functional testing is

performed per applicable device specification at room temperature followed by hot

temperature, unless specified otherwise in the device specification.

5.4 DC Electrical Specifications

Table 7. DC Electrical Specifications

Characteristic

Symbol

Min

Max

Unit

Core Supply Voltage

PLL Supply Voltage

CMOS Pad Supply Voltage

Mobile DDR/Bus Pad Supply Voltage

DDR/Bus Pad Supply Voltage

SDR/Bus Pad Supply Voltage

CMOS Input High Voltage

CMOS Input Low Voltage

Mobile DDR/Bus Input High Voltage

IVDD

PLLVDD

EVDD

SDVDD

SDVDD

SDVDD

EVIH

EVIL

SDVIH

1.4

1.4

3.0

1.65

2.25

3.0

2

-0.05

TBD

1.6

V

1.6

V

3.6

V

1.95

V

2.75

V

3.6

V

EVDD + 0.05 V

0.8

V

SDVDD + 0. V

05

Mobile DDR/Bus Input Low Voltage

DDR/Bus Input High Voltage

SDVIL

SDVIH

-0.05

2

TBD

V

SDVDD + 0. V

05

DDR/Bus Input Low Voltage

SDVIL

-0.05

0.8

V

Input Leakage Current

Vin = IVDD or VSS, Input-only pins

Iin

–1.0

1.0

µA

CMOS Output High Voltage

IOH = –5.0 mA

EVOH

EVDD - 0.4

—

V

CMOS Output Low Voltage

IOL = 5.0 mA

EVOL

—

0.4

V

DDR/Bus Output High Voltage

IOH = –5.0 mA

SDVOH SDVDD - 0.4

—

V

DDR/Bus Output Low Voltage

IOL = 5.0 mA

SDVOL

—

Weak Internal Pull Up Device Current, tested at VIL Max.1

IAPU

-10

0.4

V

- 130

µA

MCF5208 ColdFire® Microprocessor Data Sheet, Rev. 0.5

Freescale Semiconductor

Preliminary

21

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