Philips Semiconductors
Full bridge driver IC
Preliminary specification
UBA2030T
SYMBOL
PARAMETER
CONDITIONS
Io(source)
output source current
Io(sink)
output sink current
IFSL(float);
IFSR(float)
floating supply current
Internal oscillator; notes 2 and 3
VDD = VFSL = VFSR = 15 V;
VGHR = VGHL = VGLR = VGLL = 0 V
VDD = VFSL = VFSR = 15 V;
VGHR = VGHL = VGLR = VGLL = 15 V
VFSR = VFSL = 15 V
fbridge
∆fosc/∆T
∆fosc/∆VDD
kH
kL
kosc
bridge oscillating frequency
oscillator frequency
dependency with respect to
temperature
oscillator frequency
dependency with respect to
VDD
HIGH-level trip point
LOW-level trip point
oscillator constant
EXO pin connected to SGND
fixed RC; ∆T = −40 °C to +150 °C
fixed RC; ∆VDD = 12 to 16 V
VRCH = kH × VDD
VRCL = kL × VDD
fbridge = (---k---o---s--c----×-----R----o1---s--c----×----C-----o---s--c---)
External oscillator; note 2
fosc(ext)
external oscillator frequency RC pin connected to SGND;
fbridge = -f-o---s--c-2-(--e--x---t-)
VIH
HIGH-level input voltage
∆-----V--∆--E--t-X---O-- > 5 V/ms
VIL
LOW-level input voltage
-∆----V--∆--E--t-X---O-- > 5 V/ms
Ii(EXO)
input current
Dead time control; notes 2 and 4
tdead
dead time control range
(adjusted externally)
kDT
dead time variable
Bridge enable; notes 2 and 5
RDT = kDT × tdead − 70 kΩ
IIH
HIGH-level input current;
note 6
IIL
VBE − VBER
LOW-level input current
threshold voltage
with reference to HV
with reference to PGND
bridge enable active
VBE − VBER = 5 V
bridge enable not active
IIH = 100 µA
MIN.
140
200
−
50
0
0
0.67
−
2.34
100
4.5
0
0
0.4
180
100
−
0
2.1
3.5
TYP.
190
260
15
−
−
−
0.71
0.01
2.49
−
−
−
−
−
270
−
1.1
−
2.6
5.5
MAX. UNIT
240 mA
320 mA
−
µA
50000 Hz
10
%
10
%
0.75
−
2.64
100000 Hz
VDD
V
0.5
V
50
µA
4
µs
380
kΩ/µs
700
µA
−
mA
20
µA
3.0
V
7.5
V
1999 Aug 10
10