NAND512R4A2C 查看數據表（PDF） - Numonyx -> Micron

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NAND512R4A2C

512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories

Numonyx -> Micron 

NAND512-A2C

DC and AC parameters

Table 18.

M

DC

characteristics,

1.8

V

devices(1)

Symbol

Parameter

Test Conditions

Min

Typ

IDD1

Sequential

Read

tRLRL minimum

E=VIL, IOUT = 0 mA

-

8

Operating Current

IDD2

Program

-

-

8

IDD3

Erase

-

-

8

IDD5

Stand-By Current (CMOS)

E=VDD-0.2,

WP=0/VDD

-

10

ILI

Input Leakage Current

VIN= 0 to VDDmax

-

-

ILO

Output Leakage Current

VOUT= 0 to VDDmax

-

-

VIH

Input High Voltage

-

VDD-0.4

-

VIL

Input Low Voltage

-

-0.3

-

VOH

Output High Voltage Level

IOH = -100 µA

VDD-0.1

-

VOL

Output Low Voltage Level

IOL = 100 µA

-

-

IOL (RB)

Output Low Current (RB)

VOL = 0.1 V

3

4

VLKO

VDD Supply Voltage (Erase and

Program lockout)

-

-

-

1. Leakage currents double on stacked devices.

Figure 16. Equivalent testing circuit for AC characteristics measurement

VDD

Max Unit

15

mA

15

mA

15

mA

50

µA

±10

µA

±10

µA

VDD+0.3 V

0.4

V

-

V

0.1

V

mA

1.1

V

NAND Flash

CL

GND

2Rref

2Rref

GND

Ai11085

35/51

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