NAND512-A2C 查看數據表（PDF） - Numonyx -> Micron

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NAND512-A2C

512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories

Numonyx -> Micron 

DC and AC parameters

NAND512-A2C

Table 19. DC Characteristics, 3V devices(1)

Symbol

Parameter

Test Conditions

IDD1

IDD2

IDD3

IDD4

IDD5

ILI

ILO

VIH

VIL

VOH

VOL

IOL (RB)

VLKO

Operating

Current

Sequential

Read

Program

Erase

Stand-by Current (TTL),

Stand-By Current (CMOS)

Input Leakage Current

Output Leakage Current

Input High Voltage

Input Low Voltage

Output High Voltage Level

Output Low Voltage Level

Output Low Current (RB)

VDD Supply Voltage (Erase and

Program lockout)

tRLRL minimum

E=VIL, IOUT = 0 mA

-

-

E=VIH, WP=0V/VDD

E=VDD-0.2, WP=0/VDD

VIN= 0 to VDDmax

VOUT= 0 to VDDmax

-

-

IOH = −400µA

IOL = 2.1mA

VOL = 0.4V

-

1. Leakage currents double on stacked devices.

Min

-

-

-

-

-

-

-

2.0

−0.3

2.4

-

8

-

Typ

Max Unit

10

20

mA

10

20

mA

10

20

mA

-

1

mA

10

50

µA

-

±10 µA

-

±10 µA

-

VDD+0.3 V

-

0.8

V

-

-

V

-

0.4

V

10

mA

-

1.7

V

Table 20. AC characteristics for Command, Address, Data Input

Symbol

Alt.

Symbol

Parameter

1.8V

devices

3V

devices

Unit

tALLWH

Address Latch Low to Write Enable High

tALS

AL Setup time Min 25

tALHWH

Address Latch High to Write Enable High

tCLHWH

Command Latch High to Write Enable High

tCLLWH

tCLS

CL Setup time

Command Latch Low to Write Enable High

Min

25

tDVWH

tDS Data Valid to Write Enable High

Data Setup time Min 20

tELWH

tCS Chip Enable Low to Write Enable High

E Setup time Min 30

tWHALH

tWHALL

Write Enable High to Address Latch High

tALH

Write Enable High to Address Latch Low

AL Hold time

Min 10

tWHCLH

tWHCLL

Write Enable High to Command Latch High

tCLH

CL hold time

Write Enable High to Command Latch Low

Min 10

tWHDX tDH Write Enable High to Data Transition

Data Hold time Min 10

tWHEH tCH Write Enable High to Chip Enable High

E Hold time

Min 10

tWHWL tWH Write Enable High to Write Enable Low

W High Hold

time

Min 15

tWLWH

tWLWL

tWP Write Enable Low to Write Enable High

tWC Write Enable Low to Write Enable Low

W Pulse Width Min 25

Write Cycle time Min 45

15 ns

15 ns

15 ns

20 ns

5

ns

5

ns

5

ns

5

ns

10 ns

15 ns

30 ns

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