Typical Characteristics: N-Channel (continued)
10
ID = 0.51A
8
6
VDS = 25V
30V
48V
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
0.1
VGS = 10V
SINGLE PULSE
RθJA = 180oC/W
TA = 25oC
10µs
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
60
f = 1MHz
VGS = 0 V
50
40
30
CISS
20
COSS
10
CRSS
0
0
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
8
RθJA = 180°C/W
TA = 25°C
6
4
2
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 180 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
NDC7001C Rev B (W)