NDC7001C 查看數據表（PDF） - Fairchild Semiconductor
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NDC7001C Datasheet PDF : 8 Pages
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Typical Characteristics: P-Channel (continued)
10
ID = -0.34A
8
6
VDS = -25V
-30V
-48V
4
2
0
0
0.4
0.8
1.2
1.6
2
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
10µs
1ms
10ms
0.1
VGS = -10V
SINGLE PULSE
RθJA = 180oC/W
TA = 25oC
100ms
1s
DC
0.01
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
100
f = 1 MHz
VGS = 0 V
80
CISS
60
40
COSS
20
CRSS
0
0
10
20
30
40
50
60
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
10
8
6
4
2
0
0.001
0.01
SINGLE PULSE
RθJA = 180°C/W
TA = 25°C
0.1
1
t1, TIME (sec)
10
100
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 180 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
NDC7001C Rev B (W)
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