Philips Semiconductors
Brushless DC motor drive circuit
Preliminary specification
TDF5242T
CHARACTERISTICS
VP = 14.5 V ±10%; Tamb = −40 to +85 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Supply
VP
supply voltage
note 1
4
IP
supply current
note 2
−
VVMOT
input voltage to the output driver see Fig.1
3
stages
Thermal protection
TSD
temperature at temperature sensor
130
causing shut-down
∆T
decrease in temperature before
−
switch-on after shut-down
COMP-A, COMP-B, COMP-C and MOT0
VI
II
VCSW
∆VCSW
input voltage
input bias current
comparator switching level
variation in comparator switching
levels
−0.5
0.5 V < VI < VVMOT − 1.5 V −10
note 3
±20
−3
Vhys
comparator input hysteresis
Tamb = 25 °C
−
OUT-NA, OUT-NB, OUT-NC, OUT-PA, OUT-PB and OUT-PC
VO(n)
VO(p)
∆VOL
n-channel driver output voltage
p-channel driver output voltage
variation in saturation voltage
between lower transistors
upper transistor;
IO = −100 mA;
Tamb = 25 °C
lower transistor;
IO = 10 mA; Tamb = 25 °C
upper transistor;
IO = −10 mA; Tamb = 25 °C
lower transistor;
IO = 100 mA; Tamb = 25 °C
IO = 100 mA; Tamb = 25 °C
−1.05
−
−1.05
−
−
∆VOH
ILIM
variation in saturation voltage
between upper transistors
current limiting
IO = −100 mA;
−
Tamb = 25 °C
lower transistor; RO = 47 Ω 150
+AMP IN and −AMP IN
VI
input voltage
−0.3
differential mode voltage without
−
‘latch-up’
Ib
CI
Voffset
input bias current
input capacitance
input offset voltage
Tamb = 25 °C
−
Tamb = 25 °C
−
−
TYP. MAX. UNIT
−
18
V
5.2
6.25 mA
−
18
V
140
150
°C
TSD − 30 −
K
−
VVMOT V
−
0
µA
±25
±30
mV
0
+3
mV
75
−
µV
−
−
V
−
0.35 V
−
−
V
−
0.35 V
−
180
mV
−
180
mV
180
250
mA
−
VP − 1.7 V
−
±VP
V
−
650
nA
4
−
pF
−
10
mV
1997 Sep 12
10