2N03L04 查看數據表（PDF） - Infineon Technologies

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2N03L04

OptiMOS® Power-Transistor

Infineon Technologies 

Electrical Characteristics

Parameter

Dynamic Characteristics

Transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Inverse diode continuous

forward current

Inv. diode direct current, pulsed

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

SPI80N03S2L-04

SPP80N03S2L-04,SPB80N03S2L-04

Symbol

Conditions

Values

Unit

min. typ. max.

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS≥2*ID *RDS(on)max,

ID =80A

VGS=0V, VDS =25V,

f=1MHz

11.5

-

-

-

VDD =15V, VGS =10V,

-

ID =80A,

-

RG=2.2Ω

-

-

23

2930

1150

268

13

20

54

19

-S

3900 pF

1520

402

19 ns

30

81

28

Qgs

VDD =24V, ID =40A

Qgd

Qg

VDD =24V, ID =40A,

VGS=0 to 10V

V(plateau) VDD =24V, ID =40A

-

9 12 nC

-

27 41

-

79 105

- 3.2 - V

IS

ISM

VSD

trr

Qrr

TC=25°C

VGS=0V, IF=80A

VR=15V, I F=lS,

diF/dt=100A/µs

-

- 80 A

-

- 320

- 0.9 1.2 V

- 50 62 ns

- 61 76 nC

Page 3

2003-05-09

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