SGF23N60UFD 查看數據表（PDF） - Fairchild Semiconductor

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SGF23N60UFD

Ultra-Fast IGBT

Fairchild Semiconductor 

SGF23N60UFD

Ultra-Fast IGBT

June 2001

IGBT

General Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD

series provides low conduction and switching losses.

UFD series is designed for the applications such as motor

control and general inverters where High Speed Switching

is required.

Features

• High Speed Switching

• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A

• High Input Impedance

• CO-PAK, IGBT with FRD : trr = 42ns (typ.)

Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls

C

GC E

TTOO--33PPFF

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VCES

VGES

IC

ICM (1)

IF

IFM

PD

TJ

Tstg

TL

Description

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

Collector Current

Pulsed Collector Current

@ TC = 25°C

@ TC = 100°C

Diode Continuous Forward Current

Diode Maximum Forward Current

@ TC = 100°C

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction Temperature

@ TC = 25°C

@ TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

RθJC(IGBT)

RθJC(DIODE)

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

G

E

SGF23N60UFD

600

± 20

23

12

92

12

92

75

30

-55 to +150

-55 to +150

300

Typ.

--

--

--

Max.

1.6

3.0

40

Units

V

V

A

A

A

A

A

W

W

°C

°C

°C

Units

°C/W

°C/W

°C/W

©2001 Fairchild Semiconductor Corporation

SGF23N60UFD Rev. A

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