DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

G03H1202 查看數據表(PDF) - Infineon Technologies

零件编号
产品描述 (功能)
生产厂家
G03H1202
Infineon
Infineon Technologies Infineon
G03H1202 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IGP03N120H2,
IGW03N120H2
IGB03N120H2
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
VCE
IC
Eoff
Tj
Package
Ordering Code
IGW03N120H2 1200V 3A 0.15mJ 150°C P-TO-247
Q67040-S4596
IGP03N120H2 1200V 3A 0.15mJ 150°C P-TO-220-3-1
Q67040-S4599
IGB03N120H2 1200V 3A 0.15mJ 150°C P-TO-263 (D2PAK) Q67040-S4598
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
Unit
1200
V
A
9.6
3.9
9.9
9.9
±20
V
62.5
W
-40...+150
°C
260
225 (for SMD)
Power Semiconductors
1
Rev. 2, Mar-04

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]