50C02CH 查看數據表（PDF） - ON Semiconductor
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50C02CH Datasheet PDF : 5 Pages
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50C02CH
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3)
Parameter
Symbol
Conditions
Value
min
typ
Unit
max
Collector Cutoff Current
ICBO
VCB=40V, IE=0A
100 nA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
100 nA
DC Current Gain
hFE
VCE=2V, IC=10mA
300
800
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
500
MHz
Output Capacitance
Collector to Emitter Saturation
Voltage
Cob
VCE(sat)
VCB=10V, f=1MHz
IC=100mA, IB=10mA
2.8
pF
50
100 mV
Base to Emitter Saturation Voltage
Collector to Base Breakdown
Voltage
VBE(sat)
V(BR)CBO
IC=100mA, IB=10mA
IC=10μA, IE=0A
0.9
1.2 V
60
V
Collector to Emitter Breakdown
Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter to Base Breakdown Voltage V(BR)EBO
IE=10μA, IC=0A
5
V
Turn-On Time
Storage Time
Fall Time
ton
tstg
See specified Test
Circuit
tf
30
ns
340
ns
55
ns
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
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