5N3011 查看數據表（PDF） - Renesas Electronics
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5N3011 Datasheet PDF : 7 Pages
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H5N3011P
Static Drain to Source on State Resistance
vs. Temperature
0.2
VGS = 10 V
Pulse Test
0.16
0.12
ID = 88 A
44 A
0.08
20 A
0.04
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
5
2
1
0.1 0.3
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
400
16
ID = 88 A
VDD = 50 V
300
100 V
240 V
VDS
VGS
12
200
8
100
4
VDD = 240 V
100 V
50 V
0
0
40 80 120 160 200
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = −25°C
10
3
25°C
1
75°C
0.3
VDS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
100000
30000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
10000
3000
Ciss
1000
Coss
300
100
Crss
30
10
0
50
100
150
Drain to Source Voltage VDS (V)
10000
Switching Characteristics
VGS = 10 V, VDD = 150 V
PW = 5 µs, duty < 1 %
RG = 10 Ω
1000
tf
tr
td(off)
100
tf
td(on)
tr
10
0.1 0.3 1 3
10 30 100
Drain Current ID (A)
Rev.2.00, Aug.05.2004, page 4 of 6
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