AP03N70P-A 查看數據表（PDF） - Advanced Power Technology
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AP03N70P-A Datasheet PDF : 6 Pages
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AP03N70P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
/-
VGS=0V, ID=1mA
/A
VGS=0V, ID=1mA
/H
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
VGS=10V, ID=1.6A
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
VDS=10V, ID=1.6A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS= ± 30V
ID=3.3A
VDS=480V
VGS=10V
VDD=300V
ID=3.3A
RG=10Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=91Ω
VGS=0V
VDS=25V
f=1.0MHz
600 -
-
V
650 -
-
V
700 -
-
V
- 0.6 - V/℃
-
- 3.6 Ω
2
-
4
V
-
2
-
S
-
- 10 uA
-
- 100 uA
-
- ±100 nA
- 11.4 - nC
- 3.1 - nC
- 4.2 - nC
- 8.4 - ns
-
6
- ns
- 17.7 - ns
- 5.9 - ns
- 600 - pF
- 45 - pF
-
4
- pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25℃, IS=3.3A, VGS=0V
Min. Typ. Max. Units
-
- 3.3 A
-
- 13.2 A
-
- 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=3.3A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP03N70P- X : X Denote BVDSS Grade
Blank = BVDSS 600V
A = BVDSS 650V
H = BVDSS 700V
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