1N6661US 查看數據表（PDF） - Microsemi Corporation
零件编号
产品描述 (功能)
生产厂家
1N6661US Datasheet PDF : 2 Pages
| |||
SCOTTSDALE DIVISION
1N6661US thru 1N6663US
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
DESCRIPTION
APPEARANCE
These “standard recovery” rectifier diodes are military qualified to MIL-PRF-19500/587
and is ideal for high-reliability applications where a failure cannot be tolerated. They
have a 500 mA rating with working peak reverse voltages from 225 to 600 volts and
are hermetically sealed with void-less-glass construction using an internal “Category I”
metallurgical bond. The axial-leaded package configurations are also available by
deleting the “US” suffix (see separate data sheet for 1N6661 to 1N6663). Microsemi
also offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including Fast and Ultrafast device
types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Package “A”
or D-5A
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N6661 thru 1N6663 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 225 to 600 Volts.
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/587
• Axial-leaded equivalents also available without the
“US” suffix (see 1N6661 thru 1N6663)
• Standard recovery 0.5 Amp rectifiers 225 to 600 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• Forward surge current capability
• Extremely robust construction
• Low thermal resistance in small MELF package
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction & Storage Temperature: -65oC to +175oC
• Thermal Resistance: 35oC/W junction to end cap
• Average Rectified Forward Current (IO): 0.5 Amps @
TEC = 110ºC and 0.150 Amps at TEC = 150ºC
• Forward Surge Current: 5 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed void-less hard glass
with Tungsten slugs
• TERMINATIONS: End caps are copper with
Tin/Lead (Sn/Pb) finish
• MARKING: Body paint
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 84 mg (approx)
• See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING MINIMUM
AVERAGE
MAXIMUM
MAXIMUM
PEAK BREAKDOWN
RECTIFIED
FORWARD
MAXIMUM REVERSE
SURGE
TYPE
REVERSE
VOLTAGE
VRWM
VOLTS
VOLTAGE
VBR @ 100μA
VOLTS
CURRENT
(NOTE 2)
IO
AMPS
25oC
150oC
VOLTAGE
VF @ 0.4 A
(PULSED)
VOLTS
CURRENT
IR @ VRWM
μA
25oC
150oC
CURRENT
(NOTE 1)
IFSM
AMPS
1N6661US
225
270
0.5
0.15
1.0
0.05
300
5
1N6662US
400
480
0.5
0.15
1.0
0.05
300
5
1N6663US
600
720
0.5
0.15
1.0
0.05
300
5
NOTE 1: TA = 25oC, 10 surges of 8.3 ms @ 1 minute intervals
NOTE 2: Linearly derate at 8.75 mA/ºC between TEC = 110ºC to 150ºC and 6.0 mA/ºC between TEC = 150ºC to 175ºC
Copyright © 2008
1-03-2008
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Share Link: 