Philips Semiconductors
1PS66SB63; 1PS79SB63
5 V, 20 mA low Cd Schottky barrier diodes
102
IF
(mA)
10
mhc183
1
(1) (2) (3)
10−1
10−2
0
0.2
0.4
0.6
0.8
1
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig 1. Forward current as a function of forward
voltage; typical values
0.38
Cd
(pF)
0.34
103
IR
(µA)
102
10
1
mhc184
(1)
(2)
(3)
10−1
0
1
2
3
4
5
VR (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig 2. Reverse current as a function of reverse
voltage; typical values
mhc185
0.3
0.26
0.22
0
1
2
3
4
5
VR (V)
Tamb = 25 °C; f = 1 MHz.
Fig 3. Diode capacitance as a function of reverse voltage; typical values
9397 750 13846
Product data sheet
Rev. 02 — 3 December 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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