1PS79SB31 查看數據表（PDF） - NXP Semiconductors.
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1PS79SB31 Datasheet PDF : 7 Pages
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NXP Semiconductors
Schottky barrier diode
Product data sheet
1PS79SB31
FEATURES
• Very low forward voltage
• Guard ring protected
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Low current rectification
• Low power consumption applications (e.g. hand-held
devices).
;handbook, halfpage k
Top view
a
MAM403
Marking code: G3.
The marking bar indicates the cathode.
Fig.1 Simplified outline SOD523 (SC-79) and
symbol.
DESCRIPTION
Planar Schottky barrier diode in a SOD523 (SC-79) ultra
small SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
tp ≤ 1 s; δ ≤ 0.5
t = 8.3 ms half sine wave;
JEDEC method
MIN.
−
−
−
−
MAX.
30
200
300
1 000
UNIT
V
mA
mA
mA
−65
+150
°C
−
125
°C
−65
+125
°C
2002 Jan 11
2
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