28F016SV 查看數據表（PDF） - Intel
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28F016SV Datasheet PDF : 63 Pages
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E
28F016SV FlashFile™ MEMORY
5.9 AC Characteristics for CE#—Controlled Command Write Operations(1)
(Continued)
VCC = 5V ± 0.5V, 5V ± 0.25V, TA = 0° to +70°C, –40°C to +85°C
Temp
Commercial
Extended
Speed
–65
–70
–80
Sym
Parameter
VCC
5V ± 5%
5V ± 10%
5V ± 10%
Unit
Load
30 pF
50 pF
50 pF
Notes Min Typ Max Min Typ Max Min Typ Max
tAVAV Write Cycle Time
tVPEH1,2 VPP Setup to CE#
Going High
tPHWL
RP# Setup to WE#
Going Low
tWLEL
WE# Setup to CE#
Going Low
tAVEH
Address Setup to
CE# Going High
tDVEH
Data Setup to CE#
Going High
tELEH
CE# Pulse Width
65
3,7 100
3
300
3,7
0
2,6,7 40
2,6,7 40
7
45
tEHDX Data Hold from CE#
2,7
0
High
tEHAX
Address Hold from
CE# High
2,7
10
tEHWH WE# Hold from CE#
3,7
5
High
tEHEL
CE# Pulse Width
High
7
15
tGHEL
Read Recovery
before Write
3
0
tEHRL CE# High to RY/BY# 3,7
Going Low
tRHPL RP# Hold from Valid
3
0
Status Register
(CSR, GSR, BSR)
Data and RY/BY#
High
70
100
480(9)
300(10)
0
50(9)
45(10)
50(9)
45(10)
45(9)
50(10)
0
10
10(9)
5(10)
30(9)
15(10)
0
100
0
80
100
480
0
50
50
50
0
10
10
30
0
100
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
100 ns
ns
51
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