28F016XD 查看數據表（PDF） - Intel

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28F016XD

16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

Intel 

28F016XD FLASH MEMORY

E

5.2 Capacitance

For a 3.3V ± 0.3V System:

Sym

Parameter

CIN

COUT

CLOAD

Capacitance Looking into an

Address/Control Pin

Capacitance Looking into an

Output Pin

Load Capacitance Driven by

Outputs for Timing Specifications

Notes Typ Max Units

Test Conditions

1

6

8

pF TA = +25°C, f = 1.0 MHz

1

8

12

pF TA = +25°C, f = 1.0 MHz

1,2

50

pF

For 5.0V ± 0.5V System:

Sym

Parameter

Notes Typ Max Units

Test Conditions

CIN

Capacitance Looking into an

Address/Control Pin

1

6

8

pF TA = +25°C, f = 1.0 MHz

COUT

Capacitance Looking into an

Output Pin

1

8

12

pF TA = +25°C, f = 1.0 MHz

CLOAD Load Capacitance Driven by

1,2

Outputs for Timing Specifications

100 pF

NOTE:

1. Sampled, not 100% tested.

2. To obtain iBIS models for the 28F016XD, please contact your local Intel/Distribution Sales Office.

20

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