2N6099 查看數據表（PDF） - Quanzhou Jinmei Electronic

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产品描述 (功能)

生产厂家

2N6099

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

www.jmnic.com

Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

2N6098

VCEO(SUS)

Collector-emitter

sustioning voltage

2N6099

2N6100

IC=0.1A ;IB=0

2N6101

VCEsat-1 Collector-emitter saturation voltage

IC=5A;IB=0.5A

VCEsat-2 Collector-emitter saturation voltage

IC=10A;IB=2.5A

2N6098/6099 IC=4A ; VCE=4V

VBE

Base-emitter on voltage

2N6100/6101 IC=5A ; VCE=4V

ICBO

Collector cut-off current

VCB=Rated VCBO;IE=0

TC=150℃

IEBO

Emitter cut-off current

VEB=8V; IC=0

hFE

DC current gain

fT

Transition frequency

2N6098/6099 IC=4A ; VCE=4V

2N6100/6101 IC=5A ; VCE=4V

IC=1A ; VCE=10V

MIN TYP. MAX UNIT

70

70

V

80

80

1.3

V

3.5

V

1.3

V

0.5

2.0

mA

1.0 mA

20

80

0.8

MHz

JMnic

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