2N7000BU 查看數據表（PDF） - Fairchild Semiconductor
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2N7000BU Datasheet PDF : 3 Pages
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Advanced Small Signal MOSFET 2N7000BU/2N7000TA
FEATURES
n Fast Switching Times
n Improved Inductive Ruggedness
n Lower Input Capacitance
n Extended Safe Operating Area
n Improved High Temperature Reliability
BVDSS = 60 V
RDS(on) = 5.0 Ω
ID = 200 mA
TO-92
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25℃)
Continuous Drain Current (TC=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
Thermal Resistance
Symbol
RθJA
Characteristic
Junction-to-Ambient
1.Source 2. Gate 3. Drain
Value
60
200
110
1000
±30
400
3.2
- 55 to +150
300
Units
V
mA
mA
V
mW
mW/℃
℃
Typ.
--
Max.
312.5
Units
℃/W
Rev. B
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