2N7000BU 查看數據表（PDF） - Fairchild Semiconductor

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2N7000BU

Advanced Small Signal MOSFET

Fairchild Semiconductor 

2N7000BU/2N7000TA

N-CHANNEL

Small Signal MOSFET

Electrical Characteristics (TC=25℃ unless otherwise specified)

Symbol

BVDSS

VGS(th)

IGSS

IDSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Characteristic

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source

On-State Resistance

②

Forward Transconductance ②

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Min. Typ. Max. Units

Test Condition

60 -- -- V VGS=0V,ID=250μA

0.3 -- 3.9 V VDS= VGS,ID=250μA

0.4 -- 2.2

VDS= VGS,ID=1mA

-- -- 100 nA VGS=15V

-- -- -100

VGS=-15V

-- -- 1

VDS=60V

-- -- 1000 μA VDS=45V,TC=125℃

-- -- 5.0 Ω VGS=10V,ID=0.5A

0.1 0.3 -- S VDS=15V,ID=0.5A

-- 30 --

-- 12 --

-- 3.0 --

VGS=0V,VDS=25V,

pF f =1MHz

-- -- 10

-- -- 10

VDD=30V,ID=0.5A,

-- -- 10 ns RG=15Ω

②③

-- -- 10

Notes ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%

③ Essentially Independent of Operating Temperature

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