2N7002ZL-AE2-R 查看數據表（PDF） - Unisonic Technologies
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2N7002ZL-AE2-R Datasheet PDF : 4 Pages
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2N7002Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (T A=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60
V
±20
V
Drain Current
Continuous
Pulse(Note 2)
ID
300
mA
800
Power Dissipation
Derating above TA=25°C
225
mW
PD
1.6
mW/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
°C
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦10μs, Duty cycle≦1%
ELECTRICAL CHARACTERISTICS (T A=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=10µA
60
V
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
VDS=60V, VGS=0V
IGSS
VDS=0V, VGS=±20V
1.0 µA
±10 µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=10V, ID=1mA
1.0 1.85 2.5 V
Static Drain-Source On-Resistance (Note)
RDS(ON)
VGS=10V, ID=0.3A
VGS=5V, ID=0.05A
7.5
Ω
7.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
25 50 pF
Output Capacitance
Reverse Transfer Capacitance
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
10 25 pF
3.0 5.0 pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON) ID=0.2 A, VDD=30V, VGS=10V,
Turn-OFF Delay Time
tD(OFF) RL=150Ω, RG=10Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
12 20 ns
20 30 ns
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=300mA (Note)
0.88 1.5 V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
0.8 A
Maximum Continuous Drain-Source Diode
Is
Forward Current
300 mA
Note: Pulse width≦300μs, Duty cycle≦1%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-273.G
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