2SA1204-O 查看數據表（PDF） - Toshiba
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2SA1204-O Datasheet PDF : 4 Pages
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−800
−8
−600
−400
−200
IC – VCE
−7
−6
Common emitter
Ta = 25°C
−5
−4
−3
−2
IB = −1 mA
0
0
0
−2
−4
−6
−8
Collector-emitter voltage VCE (V)
2SA1204
1000
500
300
100
50
30
hFE – IC
Ta = 100°C
25
−25
Common emitter
VCE = −1 V
10
−1
−3
−10
−30
−100 −300 −1000
Collector current IC (mA)
−1
Common emitter
−0.5 IC/IB = 25
−0.3
VCE (sat) – IC
−0.1
−0.05
−0.03
Ta = 100°C
25
−25
−0.01
−1
−3
−10
−30
−100 −300
Collector current IC (mA)
−1000
−800
−600
IC – VBE
Common emitter
VCE = −1 V
Ta = 100°C
−400
25
−25
−200
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage VBE (V)
Safe Operating Area
−3000
IC max (pulse)*
10 ms*
−1000 IC max (continuous)
−500
−300
−100
DC operation
Ta = 25°C
100 ms*
1 ms*
−50
−30 *: Single nonrepetitive pulse
Ta = 25°C
−10 Curves must be derated linearly
with increase in temperature.
−5 Tested without a substrate.
−3
−0.1 −0.3
−1
−3
−10
VCEO max
−30 −100
Collector-emitter voltage VCE (V)
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 mm t)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
2011-02-04
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