2SA1116 查看數據表（PDF） - Inchange Semiconductor
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2SA1116 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1116
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
-200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
-3.0 V
-100 μA
-100 μA
hFE
DC Current Gain
IC= -5A ; VCE= -4V
30
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -12V
20
MHz
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= -5A, RL= 12Ω,
IB1= -IB2= -0.5A, VCC= -60V
0.3
μs
0.9
μs
0.2
μs
isc Website：www.iscsemi.cn
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