2SA1187 查看數據表（PDF） - Inchange Semiconductor

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2SA1187

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-3A ; VCE=-4V

Cob

Output capacitance

IE=0 ; VCB=-80V;f=1MHz

fT

Transition frequency

IE=1A ; VCE=-12V

‹ hFE Classifications

O

P

Y

50-100

70-140

90-180

Product Specification

2SA1187

MIN TYP. MAX UNIT

-150

V

-2.0

V

-0.1

mA

-0.1

mA

50

110

pF

60

MHz

2

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