2SA1107 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SA1107 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-5A ; VCE=-5V
VCB=-140V; IE=0
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-10V
Product Specification
2SA1107
MIN TYP. MAX UNIT
-150
V
-5
V
-2.0
V
-2.0
V
-10
μA
-10
μA
55
160
35
50
MHz
2
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