2SA1111 查看數據表（PDF） - Quanzhou Jinmei Electronic

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2SA1111

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SA1111 2SA1112

DESCRIPTION

·With TO-220 package

·Complement to type 2SC2591/2592

·Good linearity of hFE

·High VCEO

APPLICATIONS

·For audio frequency, high power

amplifiers application

PINNING

PIN

1

2

3

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Fig.1 simplified outline (TO-220) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VCBO

Collector-base voltage

2SA1111

2SA1112

Open emitter

VCEO

Collector-emitter voltage

2SA1111

2SA1112

Open base

VEBO

Emitter-base voltage

Open collector

IC

Collector current

ICM

Collector current-peak

PC

Collector power dissipation

TC=25℃

Tj

Junction temperature

Tstg

Storage temperature

VALUE

-150

-180

-150

-180

-5

-1

-1.5

20

150

-55~150

UNIT

V

V

V

A

A

W

℃

℃

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